Invention Grant
- Patent Title: Method for measuring a microelectromechanical semiconductor component
- Patent Title (中): 微机电半导体元件的测量方法
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Application No.: US13990337Application Date: 2011-12-05
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Publication No.: US09322731B2Publication Date: 2016-04-26
- Inventor: Peter Binkhoff
- Applicant: Peter Binkhoff
- Applicant Address: DE Dortmund
- Assignee: ELMOS Semiconductor AG
- Current Assignee: ELMOS Semiconductor AG
- Current Assignee Address: DE Dortmund
- Agency: Dardi & Herbert, PLLC
- Agent Peter S. Dardi
- Priority: EP10193596 20101203
- International Application: PCT/EP2011/071762 WO 20111205
- International Announcement: WO2012/072818 WO 20120607
- Main IPC: G01L9/00
- IPC: G01L9/00 ; B81C99/00 ; G01L27/00 ; G01R31/27 ; G01R31/28

Abstract:
Methods are directed to checking a pressure sensor comprising a reversibly deformable, in particular reversibly bendable measuring element which supplies a measurement signal having a value depending on the degree of deformation of said measuring element, to the effect of whether the pressure sensor withstands a required maximum pressure which is larger by a predeterminable factor than a nominal pressure for which the sensor is designed. The methods generally involve use of a reference pressure sensor, which is structurally identical to the pressure sensor to be checked, for generating a distance/pressure characteristic curve and for evaluating the critical pressure required for breaking the measuring element. The critical pressure can then be used to determine if a particular value of pressure is larger than the required maximum pressure that the pressure sensor to be checked is intended to withstand.
Public/Granted literature
- US20130263643A1 METHOD FOR MEASURING A MICROELECTROMECHANICAL SEMICONDUCTOR COMPONENT Public/Granted day:2013-10-10
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