Invention Grant
US09322799B2 High-k metal gate device structure for human blood gas sensing
有权
用于人类血液气体感测的高k金属栅极器件结构
- Patent Title: High-k metal gate device structure for human blood gas sensing
- Patent Title (中): 用于人类血液气体感测的高k金属栅极器件结构
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Application No.: US13856246Application Date: 2013-04-03
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Publication No.: US09322799B2Publication Date: 2016-04-26
- Inventor: Chen Shi , Steven E. Steen , Yanfeng Wang , Sufi Zafar
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: F. Chau & Associates, LLC
- Main IPC: G01N27/414
- IPC: G01N27/414

Abstract:
A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.
Public/Granted literature
- US20140300340A1 HIGH-K METAL GATE DEVICE STRUCTURE FOR HUMAN BLOOD GAS SENSING Public/Granted day:2014-10-09
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