Invention Grant
- Patent Title: Test circuit and method of semiconductor integrated circuit
- Patent Title (中): 半导体集成电路的测试电路和方法
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Application No.: US14586515Application Date: 2014-12-30
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Publication No.: US09322868B2Publication Date: 2016-04-26
- Inventor: Sang Hoon Shin , Tae Yong Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2011-0039472 20110427
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26 ; H01L21/66 ; G01R31/3185 ; G01R31/28 ; G01R31/30 ; H01L23/00

Abstract:
A test circuit of a semiconductor integrated circuit includes a through via, a voltage driving unit, and a determination unit. The through via is charged by receiving an input voltage. The voltage driving unit generates a test voltage by charging or discharging the through via in response to a test control signal. The determination unit compares levels of the input voltage and the test voltage and outputs a resultant signal.
Public/Granted literature
- US20150123698A1 TEST CIRCUIT AND METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2015-05-07
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