Invention Grant
- Patent Title: Structure of pixel
- Patent Title (中): 像素结构
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Application No.: US14356208Application Date: 2014-01-21
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Publication No.: US09323123B2Publication Date: 2016-04-26
- Inventor: Xiangyang Xu
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201310733619 20131227
- International Application: PCT/CN2014/070971 WO 20140121
- International Announcement: WO2015/096248 WO 20150702
- Main IPC: H01L29/08
- IPC: H01L29/08 ; G02F1/1362 ; G02F1/1368 ; H01L27/12 ; G09G3/36

Abstract:
The present invention provides a structure of a pixel, which has a simple structure and employs an arrangement where a terminal of the storage capacitor Cst is of the same potential as the gate line. In other words, under a condition of not reducing aperture ratio, an arrangement of two (or three) gate lines is used, of which one is used to early set the voltage of the pixel electrode to a reference voltage by one period of line scanning time and, also, which is set to partly overlap the pixel electrode of a structure of another pixel to provide a storage capacitor, so as to shorten the charging time of the pixel unit and increase the charging speed of the pixel unit.
Public/Granted literature
- US20150309380A1 STRUCTURE OF PIXEL Public/Granted day:2015-10-29
Information query
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