Invention Grant
- Patent Title: Double patterning strategy for contact hole and trench in photolithography
- Patent Title (中): 光刻中接触孔和沟槽的双重图案化策略
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Application No.: US14294315Application Date: 2014-06-03
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Publication No.: US09323155B2Publication Date: 2016-04-26
- Inventor: Chun-Kuang Chen , Hsiao-Wei Yeh , Chih-An Lin , Chien-Wei Wang , Feng-Cheng Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/38 ; G03F7/00 ; G03F7/40 ; H01L21/033 ; H01L21/311
Abstract:
A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.
Public/Granted literature
- US20140272714A1 DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH IN PHOTOLITHOGRAPHY Public/Granted day:2014-09-18
Information query
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