Invention Grant
- Patent Title: Internal voltage generation circuits and semiconductor devices including the same
- Patent Title (中): 内部电压产生电路和包括其的半导体器件
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Application No.: US14175315Application Date: 2014-02-07
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Publication No.: US09323260B2Publication Date: 2016-04-26
- Inventor: Jae Hoon Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0109846 20130912
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02 ; G05F1/46

Abstract:
An internal voltage generation circuit including a voltage generator and a detection voltage generator. The voltage generator generates a temperature reference voltage signal whose level depends on an internal temperature, a division reference voltage signal whose level is constant regardless of the internal temperature, and a selection reference voltage signal obtained by detecting a level of an internal voltage signal. The detection voltage generator compares the division reference voltage signal and the selection reference voltage signal in response to the temperature reference voltage signal to generate a detection voltage signal controlling a pumping operation of the internal voltage signal.
Public/Granted literature
- US20150070053A1 INTERNAL VOLTAGE GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME Public/Granted day:2015-03-12
Information query
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