Invention Grant
- Patent Title: Memory, and method of reading data from the memory
- Patent Title (中): 内存和从内存中读取数据的方法
-
Application No.: US14009309Application Date: 2012-03-22
-
Publication No.: US09323469B2Publication Date: 2016-04-26
- Inventor: Tae Sun Hwang , In Sun Park
- Applicant: Tae Sun Hwang , In Sun Park
- Applicant Address: KR Seoul
- Assignee: INDUSTRIAL BANK OF KOREA
- Current Assignee: INDUSTRIAL BANK OF KOREA
- Current Assignee Address: KR Seoul
- Agency: Ladas & Parry LLP
- Priority: KR10-2011-0030375 20110401
- International Application: PCT/KR2012/002049 WO 20120322
- International Announcement: WO2012/134098 WO 20121004
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C16/04 ; G11C16/08 ; G11C16/24 ; G11C16/26 ; G11C16/32 ; G11C7/22 ; G11C8/16 ; G06F12/00

Abstract:
Disclosed is a method of reading data from a memory including a NAND cell array for performing communications via a serial peripheral interface (SPI) bus. The method includes sequentially receiving inputs of a block address, a word-line address, and a bit-line address of the NAND cell array; and starting to output data written in the NAND cell array immediately after the bit-line address is completely input. In this case, the sequential receiving of the inputs is performed via one input terminal.
Public/Granted literature
- US20140244906A1 MEMORY, AND METHOD OF READING DATA FROM THE MEMORY Public/Granted day:2014-08-28
Information query