Invention Grant
- Patent Title: Source line voltage regulation scheme for leakage reduction
- Patent Title (中): 源极电压调节方案用于泄漏减少
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Application No.: US14220663Application Date: 2014-03-20
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Publication No.: US09324383B2Publication Date: 2016-04-26
- Inventor: Gu-Huan Li , Hsu-Shun Chen , Chung-Chieh Chen , Cheng-Hsiung Kuo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/14 ; G11C11/408 ; G11C8/08 ; G11C7/12 ; G11C16/24 ; G11C16/30

Abstract:
An integrated circuit that includes a generator unit connected to one or more pull-up units, one or more pull-up units connected to one or more source lines and an array of memory cells connected to the one or more source lines. The generator unit is configured to set a first voltage signal of each pull-up unit of the one or more pull-up units. Each pull-up unit of the one or more pull-up units is connected with the corresponding source line of the one or more source lines and is configured to set a current of the corresponding source line of the one or more source lines. The array of memory cells is electrically connected to the one or more source lines and one or more bit lines.
Public/Granted literature
- US20150269974A1 SOURCE LINE VOLTAGE REGULATION SCHEME FOR LEAKAGE REDUCTION Public/Granted day:2015-09-24
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