Invention Grant
- Patent Title: Voltage-controlled magnetic anisotropy (VCMA) switch and magneto-electric memory (MERAM)
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Application No.: US14813421Application Date: 2015-07-30
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Publication No.: US09324403B2Publication Date: 2016-04-26
- Inventor: Pedram Khalili Amiri , Kang L. Wang , Kosmas Galatsis
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agency: O'Banion & Ritchey LLP
- Agent John P. O'Banion
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/08 ; H01L43/02 ; H01F10/32
Abstract:
Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.
Public/Granted literature
- US20150332749A1 VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY (VCMA) SWITCH AND MAGNETO-ELECTRIC MEMORY (MERAM) Public/Granted day:2015-11-19
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