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US09324414B2 Selective dual cycle write operation for a self-timed memory 有权
选择性的双周期写入操作为自定时存储器

Selective dual cycle write operation for a self-timed memory
Abstract:
A write is performed to a first cell of a memory at a first row and column during a first memory access cycle. A memory access operation is made to a second cell at a second row and column during an immediately following second memory access cycle. If the memory access is a read from the second cell and the second row is the same as the first row, or if the memory access is a write to the second cell and the second row is the same as the first row and the second column is different than the first column, then a simultaneous operation is performed during the second memory access cycle. The simultaneous operation is an access of the second cell (for read or write) and a re-write of data from the first memory access cycle write operation back to the first cell.
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