Invention Grant
- Patent Title: High capacitance single layer capacitor
- Patent Title (中): 高电容单层电容器
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Application No.: US13168879Application Date: 2011-06-24
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Publication No.: US09324499B2Publication Date: 2016-04-26
- Inventor: Ali Moalemi , Euan Patrick Armstrong
- Applicant: Ali Moalemi , Euan Patrick Armstrong
- Applicant Address: US IL Itasca
- Assignee: Knowles Capital Formation, Inc.
- Current Assignee: Knowles Capital Formation, Inc.
- Current Assignee Address: US IL Itasca
- Agency: Burr & Brown, PLLC
- Main IPC: H01G4/06
- IPC: H01G4/06 ; H01G4/228 ; H01G4/38 ; H01G4/005 ; H01G4/252 ; H01G4/232
Abstract:
A high capacitance single layer ceramic capacitor structure having a ceramic dielectric body containing one or more internal electrodes electrically connected to a metallization layer applied to the side and bottom surfaces and a metallization pad electrically isolated from the metallization side and bottom surfaces positioned on a top surface of the ceramic body.
Public/Granted literature
- US20120327553A1 HIGH CAPACITANCE SINGLE LAYER CAPACITOR Public/Granted day:2012-12-27
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