Invention Grant
- Patent Title: Method for fabricating equal height metal pillars of different diameters
- Patent Title (中): 制造不同直径等高金属柱的方法
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Application No.: US14259530Application Date: 2014-04-23
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Publication No.: US09324557B2Publication Date: 2016-04-26
- Inventor: Steven D. Cate , John W. Osenbach
- Applicant: LSI Corporation
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/00 ; H01L21/56 ; H01L21/78 ; H01L23/00

Abstract:
A process to form metal pillars on a flip-chip device. The pillars, along with a layer of solder, will be used to bond die pads on the device to respective substrate pads on a substrate. A photoresist is deposited over the device and a first set of die pads on the device are exposed by forming openings of a first diameter in the photoresist. Pillars of the first diameter are formed by electroplating metal onto the exposed die pads. Then a second photoresist deposited over the first photoresist covers the pillars of the first diameter. Openings of a second diameter are formed in the first and second photoresists to expose a second set of die pads. Pillars of the second diameter are formed by electroplating metal onto the exposed die pads. The photoresists are then removed along with conductive layers on the device used as part of the plating process.
Public/Granted literature
- US20150262950A1 Method for Fabricating Equal Height Metal Pillars of Different Diameters Public/Granted day:2015-09-17
Information query
IPC分类: