Invention Grant
- Patent Title: Machining process for semiconductor wafer
- Patent Title (中): 半导体晶圆加工工艺
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Application No.: US14310643Application Date: 2014-06-20
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Publication No.: US09324558B2Publication Date: 2016-04-26
- Inventor: Toshiyuki Tanaka , Yasuyuki Hashimoto , Tomohiro Hashii
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2013-133386 20130626
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; B24B37/04 ; B24B1/00 ; B24B7/22
Abstract:
A surface of a semiconductor wafer is subjected to high flattening processing.A resin application and grinding step is repeatedly carried out, the step including determining as a reference surface a flat surface obtained by applying a curable material to one entire surface of a wafer sliced out from a semiconductor single crystal ingot with the use of a wire saw apparatus and performing surface grinding with respect to the other surface of the wafer, and determining as a reference surface the other surface of the wafer subjected to the surface grinding and performing the surface grinding with respect to the one surface of the wafer.
Public/Granted literature
- US20150004799A1 MACHINING PROCESS FOR SEMICONDUCTOR WAFER Public/Granted day:2015-01-01
Information query
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