Method for manufacturing semiconductor device

Invention Grant

US09324573B2 Method for manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method for manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US14762699

Application Date: 2014-01-17
Publication No.: US09324573B2

Publication Date: 2016-04-26
Inventor: Atsushi Maekawa
Applicant: PS5 Luxco S.a.r.l.
Applicant Address: LU Luxembourg
Assignee: PS5 Luxco S.a.r.l.
Current Assignee: PS5 Luxco S.a.r.l.
Current Assignee Address: LU Luxembourg
Agency: Kunzler Law Group
Priority: JP2013-010846 20130124
International Application: PCT/JP2014/050744 WO 20140117
International Announcement: WO2014/115641 WO 20140731
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L27/108 ; H01L21/02 ; H01L21/3105 ; H01L21/768

Method for manufacturing semiconductor device

Abstract:

One method includes sequentially forming an insulating film and a first material film on a semiconductor substrate, forming on the first material film a mask film having a rectangular first opening, and dry-etching the first material film using the mask film as a mask to form an ellipsoidal second opening having its shorter side aligned in a first direction of the first material film. Forming the mask film includes forming a second material film having a side surface that faces the first direction of the first opening, and a third material film having side surfaces facing a second direction of the first opening, and the thickness of the third material film is greater than the thickness of the second material film.

Abstract(Chinese):

一种方法包括在半导体衬底上依次形成绝缘膜和第一材料膜，在第一材料膜上形成具有矩形第一开口的掩模膜，并使用掩模膜作为掩模对第一材料膜进行干蚀刻以形成椭圆形的第二开口的短边在第一材料膜的第一方向上排列。形成掩模膜包括形成具有面向第一开口的第一方向的侧面的第二材料膜和具有面向第一开口的第二方向的侧表面的第三材料膜，并且第三材料膜的厚度为大于第二材料膜的厚度。

Public/Granted literature

US20150325454A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-11-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀