Semiconductor structures with shallow trench isolations

Invention Grant

US09324603B2 Semiconductor structures with shallow trench isolations 有权

Title translation: 具有浅沟槽隔离的半导体结构

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Patent Title: Semiconductor structures with shallow trench isolations
Patent Title (中): 具有浅沟槽隔离的半导体结构
Application No.: US13967558

Application Date: 2013-08-15
Publication No.: US09324603B2

Publication Date: 2016-04-26
Inventor: Shin-Yeu Tsai , Chia-Hui Lin , Ching-Yu Chen , Chui-Ya Peng
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Applicant Address: TW Hsinchu
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Current Assignee Address: TW Hsinchu
Agency: Maschoff Brennan
Main IPC: H01L21/762
IPC: H01L21/762

Semiconductor structures with shallow trench isolations

Abstract:

A method is disclosed that includes the operations outlined below. An insulating material is disposed within a plurality of trenches on a semiconductor substrate and over the semiconductor substrate. The first layer is formed over the insulating material. The first layer and the insulating material are removed.

Abstract(Chinese):

公开了一种包括以下概述的操作的方法。绝缘材料设置在半导体衬底上并在半导体衬底之上的多个沟槽内。第一层形成在绝缘材料上。去除第一层和绝缘材料。

Public/Granted literature

US20150048475A1 Semiconductor Structures With Shallow Trench Isolations Public/Granted day:2015-02-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作
H01L21/762	....介电区