Invention Grant
- Patent Title: Method for producing a semiconductor body
- Patent Title (中): 半导体本体的制造方法
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Application No.: US14111655Application Date: 2012-04-04
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Publication No.: US09324615B2Publication Date: 2016-04-26
- Inventor: Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kämpf , Jens Dennemarck
- Applicant: Korbinian Perzlmaier , Heribert Zull , Franz Eberhard , Thomas Veit , Mathias Kämpf , Jens Dennemarck
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102011017097 20110414
- International Application: PCT/EP2012/056183 WO 20120404
- International Announcement: WO2012/139953 WO 20121018
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; H01L33/00 ; H01S5/02

Abstract:
A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.
Public/Granted literature
- US20140080286A1 METHOD FOR PRODUCING A SEMICONDUCTOR BODY Public/Granted day:2014-03-20
Information query
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