Metal gate structure and method of making the same

Invention Grant

US09324620B2 Metal gate structure and method of making the same 有权

Title translation: 金属门结构及其制作方法

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Patent Title: Metal gate structure and method of making the same
Patent Title (中): 金属门结构及其制作方法
Application No.: US14462574

Application Date: 2014-08-19
Publication No.: US09324620B2

Publication Date: 2016-04-26
Inventor: Shi-Xiong Lin , Chun-Lung Chen , Kun-Yuan Liao , Feng-Yi Chang , Yu-Cheng Tung
Applicant: UNITED MICROELECTRONICS CORP.
Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
Agent Winston Hsu; Scott Margo
Priority: TW103123373A 20140707
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L27/088 ; H01L29/423

Metal gate structure and method of making the same

Abstract:

A metal gate structure includes a substrate including a dense region and an iso region. A first metal gate structure is disposed within the dense region, and a second metal gate structure is disposed within the iso region. The first metal gate structure includes a first trench disposed within the dense region, and a first metal layer disposed within the first trench. The second metal gate structure includes a second trench disposed within the iso region, and a second metal layer disposed within the second trench. The height of the second metal layer is greater than the height of the first metal layer.

Abstract(Chinese):

金属栅极结构包括具有致密区域和iso区域的基板。第一金属栅极结构设置在致密区域内，第二金属栅极结构设置在iso区域内。第一金属栅极结构包括设置在密集区域内的第一沟槽和设置在第一沟槽内的第一金属层。第二金属栅极结构包括设置在iso区内的第二沟槽和设置在第二沟槽内的第二金属层。第二金属层的高度大于第一金属层的高度。

Public/Granted literature

US20160005658A1 METAL GATE STRUCTURE AND METHOD OF MAKING THE SAME Public/Granted day:2016-01-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺