Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14085418Application Date: 2013-11-20
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Publication No.: US09324653B2Publication Date: 2016-04-26
- Inventor: Shigehiro Asano , Shinichi Kanno , Junji Yano
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-147212 20080604
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L23/522 ; G11C5/00 ; G11C5/04 ; G11C5/06 ; H01L23/60 ; H01L25/065 ; G06F9/44 ; G11C16/04 ; H01L23/00
Abstract:
On a single semiconductor package PK1, m semiconductor chips CP1 to CPm are mounted, and the semiconductor package PK1 has external terminals T shared by m pad electrodes PD1 to PDm of the m semiconductor chips CP1 to CPm. An electrostatic protection circuit CD is mounted on only one CPm of the m semiconductor chips CP1 to CPm.
Public/Granted literature
- US20140082345A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-20
Information query
