Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US14009993Application Date: 2012-04-02
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Publication No.: US09324677B2Publication Date: 2016-04-26
- Inventor: Akihiro Kimura , Takeshi Sunaga
- Applicant: Akihiro Kimura , Takeshi Sunaga
- Applicant Address: JP Kyoto-Shi, Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto-Shi, Kyoto
- Agency: Howison & Arnott, LLP
- Priority: JP2011-082406 20110404; JP2011-082407 20110404; JP2011-092709 20110419
- International Application: PCT/JP2012/058878 WO 20120402
- International Announcement: WO2012/137714 WO 20121011
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/56 ; H01L23/495 ; H01L25/065 ; H01L23/31

Abstract:
A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.
Public/Granted literature
- US20140021627A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-01-23
Information query
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