Diode circuit layout topologies and methods are disclosed that exhibit reduced lateral parasitic bipolar characteristics at lateral parasitic bipolar circuit emitter edges during ESD or other voltage events as compared to conventional circuit layout topologies. The disclosed diode circuit layout topologies may be implemented to recess parasitic emitter ends relative to surrounding well ties, for example, to reduce or substantially eliminate parasitic bipolar action at lateral emitter edges of the circuitry during ESD events so as to provide higher current threshold for device failure, allowing for smaller device area and/or improved ESD robustness for a given circuit device.