Method for forming FinFET source/drain regions with reduced field oxide loss and the resulting devices are disclosed. Embodiments include forming silicon fins separated by a field oxide on a silicon substrate; recessing the field oxide to reveal an upper portion of the silicon fins; forming a spacer layer conformally over the upper portion of the fins and over the field oxide; filling spaces between the fins with a material having high selectivity with the spacer layer; recessing the material; removing the spacer layer above an upper surface of the material; removing the material; recessing the upper portion of the fins; and epitaxially growing source/drain regions on the recessed fins.