Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13832599Application Date: 2013-03-15
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Publication No.: US09324716B2Publication Date: 2016-04-26
- Inventor: Ju-Youn Kim , Kwang-You Seo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2012-0050344 20120511
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/78 ; H01L27/092 ; H01L29/423 ; H01L29/49 ; H01L21/8238 ; H01L29/66
Abstract:
A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.
Public/Granted literature
- US20130299918A1 Semiconductor Device and Fabricating Method Thereof Public/Granted day:2013-11-14
Information query
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