Invention Grant
- Patent Title: Three dimensional multilayer circuit
- Patent Title (中): 三维多层电路
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Application No.: US13260019Application Date: 2010-01-29
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Publication No.: US09324718B2Publication Date: 2016-04-26
- Inventor: Wei Wu , R. Stanley Williams
- Applicant: Wei Wu , R. Stanley Williams
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Van Cott, Bagley, Cornwall & McCarthy
- International Application: PCT/US2010/022489 WO 20100129
- International Announcement: WO2011/093863 WO 20110804
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H03K19/177 ; H01L21/46 ; H01L21/4763 ; H01L27/10 ; H01L27/02 ; H01L27/06 ; H01L27/24

Abstract:
A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.
Public/Granted literature
- US20120280282A1 Three Dimensional Multilayer Circuit Public/Granted day:2012-11-08
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