Invention Grant
US09324743B2 Flat panel display device with oxide thin film transistor and method of fabricating the same
有权
具有氧化物薄膜晶体管的平板显示装置及其制造方法
- Patent Title: Flat panel display device with oxide thin film transistor and method of fabricating the same
- Patent Title (中): 具有氧化物薄膜晶体管的平板显示装置及其制造方法
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Application No.: US14101160Application Date: 2013-12-09
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Publication No.: US09324743B2Publication Date: 2016-04-26
- Inventor: Ki Young Jung , Ki Tae Kim , Chang Hoon Han
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG DISPLAY CO., LTD.
- Current Assignee: LG DISPLAY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2013-0060259 20130528
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/12 ; H01L29/66 ; H01L29/786 ; H01L29/423
Abstract:
A flat panel display device with an oxide thin film transistor is disclosed which includes: an oxide semiconductor layer which has a width of a first length and is formed on a buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a pixel electrode formed on a passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.
Public/Granted literature
- US20140353660A1 FLAT PANEL DISPLAY DEVICE WITH OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-12-04
Information query
IPC分类:
