Invention Grant
US09324780B2 Metal-insulator-metal (MIM) capacitor structure including redistribution layer
有权
金属绝缘体金属（MIM）电容器结构包括再分配层
- Patent Title: Metal-insulator-metal (MIM) capacitor structure including redistribution layer
- Patent Title (中): 金属绝缘体金属（MIM）电容器结构包括再分配层
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Application No.: US14069864Application Date: 2013-11-01
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Publication No.: US09324780B2Publication Date: 2016-04-26
- Inventor: Chi-Chung Jen , Chia-Lun Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522
Abstract:
Embodiments of mechanisms for forming a semiconductor device with metal-insulator-metal (MIM) capacitor structure are provided. The MIM capacitor structure includes a substrate; and a MIM capacitor formed on the substrate. The MIM capacitor includes a bottom electrode formed over the substrate. The bottom electrode is a top metal layer. The MIM capacitor also includes an insulating layer formed on the bottom electrode; and a top electrode formed on the insulating layer.
Public/Granted literature
- US20150123242A1 MECHANISMS FOR FORMING METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE Public/Granted day:2015-05-07
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