Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14250938Application Date: 2014-04-11
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Publication No.: US09324786B2Publication Date: 2016-04-26
- Inventor: Hsiung-Shih Chang , Jui-Chun Chang , Tsung-Hsiung Lee
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L29/786 ; H01L21/265
Abstract:
A semiconductor device includes a semiconductor layer, a plurality of first doped regions, a gate structure, and second and third doped regions. The semiconductor layer has a first conductivity type. The first doped regions are in parallel disposed in a portion of the semiconductor layer along a first direction and have a second conductivity type and a rectangular top view. The gate structure is disposed over a portion of the semiconductor layer along a second direction, covering a portion of the first doped regions. The second doped region is disposed in the semiconductor layer along the second direction, being adjacent to a first side of the gate structure and having the second conductivity type. The third doped region is formed in the semiconductor layer along the second direction, being adjacent to a second side of the gate structure opposing the first side and having the second conductivity type.
Public/Granted literature
- US20150295027A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-10-15
Information query
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