Invention Grant
- Patent Title: Semiconductor element
- Patent Title (中): 半导体元件
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Application No.: US14250182Application Date: 2014-04-10
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Publication No.: US09324791B2Publication Date: 2016-04-26
- Inventor: Hiroaki Tamemoto
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: JP2009-041966 20090225
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B23K26/00 ; H01L29/06 ; B28D5/00 ; H01L21/78 ; H01L33/00

Abstract:
A semiconductor element includes a substrate and a semiconductor layer. The substrate has a first main face and a second main face. The semiconductor layer is formed on a side of one of the first main face and the second main face of the substrate. The substrate has a plurality of isolated processed portions and an irregularity face that runs from the processed portions at least to the first main face of the substrate and links adjacent ones of the processed portions.
Public/Granted literature
- US20140217558A1 SEMICONDUCTOR ELEMENT Public/Granted day:2014-08-07
Information query
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