Invention Grant
- Patent Title: Superjunction power device and manufacturing method
- Patent Title (中): 超结功率器件及其制造方法
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Application No.: US14283045Application Date: 2014-05-20
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Publication No.: US09324803B2Publication Date: 2016-04-26
- Inventor: Giuseppe Morale , Carlo Magro , Domenico Murabito , Tiziana Cuscani
- Applicant: STMICROELECTRONICS S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed Intellectual Property Law Group, PLLC
- Priority: ITTO2013A0410 20130522
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L21/324 ; H01L29/739 ; H01L29/06 ; H01L21/02
Abstract:
A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.
Public/Granted literature
- US20140346588A1 SUPERJUNCTION POWER DEVICE AND MANUFACTURING METHOD Public/Granted day:2014-11-27
Information query
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