Invention Grant
US09324829B2 Method of forming a trench electrode device with wider and narrower regions
有权
形成具有更宽和更窄区域的沟槽电极器件的方法
- Patent Title: Method of forming a trench electrode device with wider and narrower regions
- Patent Title (中): 形成具有更宽和更窄区域的沟槽电极器件的方法
-
Application No.: US13850037Application Date: 2013-03-25
-
Publication No.: US09324829B2Publication Date: 2016-04-26
- Inventor: Andreas Meiser , Till Schloesser , Markus Zundel
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L23/48 ; H01L29/423 ; H01L21/768 ; H01L29/739 ; H01L29/78 ; H01L29/40
Abstract:
A method includes forming a trench extending from a first surface of a semiconductor body into the semiconductor body such that a first trench section and at least one second trench section adjoin the first trench section, wherein the first trench section is wider than the second trench section. A first electrode is formed, in the at least one second trench section, and dielectrically insulated from semiconductor regions of the semiconductor body by a first dielectric layer. An inter-electrode dielectric layer is formed, in the at least one second trench section, on the first electrode. A second electrode is formed, in the at least one second trench section on the inter-electrode dielectric layer, and in the first trench section, such that the second electrode at least in the first trench section is dielectrically insulated from the semiconductor body by a second dielectric layer.
Public/Granted literature
- US20130230956A1 Trench Electrode Arrangement Public/Granted day:2013-09-05
Information query
IPC分类:
