Invention Grant
- Patent Title: Semiconductor device with vertical gate and method of manufacturing the same
- Patent Title (中): 具有垂直栅极的半导体器件及其制造方法
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Application No.: US14497615Application Date: 2014-09-26
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Publication No.: US09324837B2Publication Date: 2016-04-26
- Inventor: Shuji Mizokuchi , Ryousuke Ookawa , Naoki Sato
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Panasonic Patent Center
- Priority: JP2011-094415 20110420
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/265 ; H01L29/08 ; H01L29/10 ; H01L29/78 ; H01L21/266 ; H01L21/28 ; H01L21/321 ; H01L21/3213 ; H01L29/423
Abstract:
A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film.
Public/Granted literature
- US20150011066A1 SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-01-08
Information query
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