Invention Grant
US09324839B2 Graphene structure, graphene device including same, and method of manufacturing graphene structure
有权
石墨烯结构，包括其的石墨烯装置以及制造石墨烯结构的方法
- Patent Title: Graphene structure, graphene device including same, and method of manufacturing graphene structure
- Patent Title (中): 石墨烯结构，包括其的石墨烯装置以及制造石墨烯结构的方法
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Application No.: US13924953Application Date: 2013-06-24
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Publication No.: US09324839B2Publication Date: 2016-04-26
- Inventor: Joung-real Ahn , Ha-chul Shin , In-kyung Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0151337 20121221
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/8238 ; H01L29/66 ; H01L29/45 ; H01L29/16 ; H01L21/02 ; C01B31/04 ; H01L29/786
Abstract:
A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate. The composite layer includes a metal.
Public/Granted literature
- US20140175458A1 GRAPHENE STRUCTURE, GRAPHENE DEVICE INCLUDING SAME, AND METHOD OF MANUFACTURING GRAPHENE STRUCTURE Public/Granted day:2014-06-26
Information query
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