Invention Grant
US09324849B2 Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
有权
使用半导体器件构建SCR，DIAC或TRIAC的结构和技术
- Patent Title: Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
- Patent Title (中): 使用半导体器件构建SCR，DIAC或TRIAC的结构和技术
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Application No.: US13678544Application Date: 2012-11-15
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Publication No.: US09324849B2Publication Date: 2016-04-26
- Inventor: Shine C. Chung
- Applicant: Shine C. Chung
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/747 ; H01L29/66 ; H01L29/739 ; H01L29/74 ; H01L29/861 ; H01L29/16 ; H01L29/06 ; H01L27/02
Abstract:
Switch devices, such as Silicon Controlled Rectifier (SCR), DIAC, or TRIAC, on a semiconductor body are disclosed. P/N junctions can be built on a semiconductor body, such as polysilicon or active region body on an insulated substrate, with a first implant in one end and a second implant in the other end. The first and second implant regions are separated with a space. A silicide block layer can cover the space and overlap into both implant regions to construct P/N junctions in the interface.
Public/Granted literature
- US20140131764A1 STRUCTURES AND TECHNIQUES FOR USING SEMICONDUCTOR BODY TO CONSTRUCT SCR, DIAC, OR TRIAC Public/Granted day:2014-05-15
Information query
IPC分类:
