Invention Grant
US09324880B2 Thin film transistor and method of producing the same, display device, image sensor, X-ray sensor, and X-ray digital imaging device
有权
薄膜晶体管及其制造方法，显示装置，图像传感器，X射线传感器和X射线数字成像装置
- Patent Title: Thin film transistor and method of producing the same, display device, image sensor, X-ray sensor, and X-ray digital imaging device
- Patent Title (中): 薄膜晶体管及其制造方法，显示装置，图像传感器，X射线传感器和X射线数字成像装置
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Application No.: US14175482Application Date: 2014-02-07
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Publication No.: US09324880B2Publication Date: 2016-04-26
- Inventor: Masashi Ono , Masahiro Takata , Atsushi Tanaka , Masayuki Suzuki
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-177235 20110812
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L29/786 ; H01L27/146 ; H01L21/02 ; H05B33/10 ; H05B33/26 ; H01L29/66 ; H01L27/32
Abstract:
A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a)Ga(b)Zn(c)O(d), wherein 0 0, 0 0, and a second region represented by In(p)Ga(q)Zn(r)O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween. A source electrode and a drain electrode are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer.
Public/Granted literature
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