Invention Grant
- Patent Title: Systems and methods to provide enhanced diode bypass paths
- Patent Title (中): 提供增强二极管旁路的系统和方法
-
Application No.: US12724371Application Date: 2010-03-15
-
Publication No.: US09324885B2Publication Date: 2016-04-26
- Inventor: Mordechay Avrutsky
- Applicant: Mordechay Avrutsky
- Applicant Address: US CA Los Gatos
- Assignee: TIGO ENERGY, INC.
- Current Assignee: TIGO ENERGY, INC.
- Current Assignee Address: US CA Los Gatos
- Agency: Greenberg Traurig LLP
- Main IPC: H01L31/044
- IPC: H01L31/044 ; H01L31/02 ; H03K5/08 ; H02S40/34

Abstract:
Systems and methods are herein disclosed for efficiently allowing current to bypass a group of solar cells having one or more malfunctioning or shaded solar cells without overwhelming a bypass diode. This can be done using a switch (e.g., a MOSFET) connected in parallel with the bypass diode. By turning the switch on and off, a majority of the bypass current can be routed through the switch, which is configured to handle larger currents than the bypass diode is designed for, leaving only a minority of the current to pass through the bypass diode.
Public/Granted literature
- US20110079263A1 Systems and Methods to Provide Enhanced Diode Bypass Paths Public/Granted day:2011-04-07
Information query
IPC分类: