Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.