Invention Grant
US09324919B2 Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
有权
具有分布式布拉格反射体的发光二极管芯片及其制造方法
- Patent Title: Light emitting diode chip having distributed Bragg reflector and method of fabricating the same
- Patent Title (中): 具有分布式布拉格反射体的发光二极管芯片及其制造方法
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Application No.: US14590493Application Date: 2015-01-06
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Publication No.: US09324919B2Publication Date: 2016-04-26
- Inventor: Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee , Chung Hoon Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2009-0109870 20091113; KR10-2010-0013166 20100212; KR10-2010-0115347 20101119
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/46 ; H01L27/15 ; H01L33/22 ; H01L33/50 ; H01L33/60

Abstract:
A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.
Public/Granted literature
- US20150194573A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-07-09
Information query
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