Invention Grant
- Patent Title: Thin-film transparent conductive structure and devices made therewith
- Patent Title (中): 薄膜透明导电结构和由其制成的器件
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Application No.: US13833161Application Date: 2013-03-15
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Publication No.: US09324966B2Publication Date: 2016-04-26
- Inventor: Wei Wu
- Applicant: E I DU PONT DE NEMOURS AND COMPANY
- Applicant Address: US DE Wilmington
- Assignee: E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee: E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L51/52 ; H01L31/18

Abstract:
A transparent conductive structure useful in the fabrication of electrical, electronic, and optoelectronic devices is provided by a mesh-like metallic structure in the form of a thin film having a plurality of apertures, e.g. one having an average size of 250 nm to 425 nm as measured in the largest dimension and an average nearest-neighbor spacing of 300 nm to 450 nm. In another aspect, the metallic thin film has plural sublayers of different metals, and may have apertures up to 2 μm in size and an average nearest-neighbor spacing of up to 2.5 μm. The metallic thin film may be 20 to 200 nm thick, and may be formed on a flexible or rigid substrate or on a device itself. The structure exhibits a transparency enhanced over a value determined simply by the fraction of the area of the metallic film occupied by the apertures.
Public/Granted literature
- US20140261656A1 THIN-FILM TRANSPARENT CONDUCTIVE STRUCTURE AND DEVICES MADE THEREWITH Public/Granted day:2014-09-18
Information query
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