A rectification circuit includes a first field-effect transistor and a bias voltage generation circuit. The field-effect transistor includes a first gate terminal, a first source terminal, a first source region having a first p-type diffusion layer and connected to the first source terminal, a first drain terminal, and a first drain region having a first n-type diffusion layer and connected to the first drain terminal. The bias voltage generation circuit is configured to apply a DC voltage between the first gate terminal and the first drain terminal.