Invention Grant
- Patent Title: Encapsulation structure comprising trenches partially filled with getter material
- Patent Title (中): 封装结构包括部分填充有吸气材料的沟槽
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Application No.: US14555913Application Date: 2014-11-28
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Publication No.: US09327963B2Publication Date: 2016-05-03
- Inventor: Xavier Baillin
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Priority: FR1361827 20131129
- Main IPC: H01L23/28
- IPC: H01L23/28 ; B81B7/00 ; B81C1/00 ; H01L23/10 ; H01L23/26 ; H01L23/31

Abstract:
An encapsulation structure comprising at least: a hermetically sealed cavity in which a micro-device is encapsulated, a substrate of which one face delimits one side of the cavity, at least two trenches formed through said face of the substrate, the interior volumes of each of the trenches communicating together, first portions of getter material covering at least in part side walls of the trenches without entirely filling the trenches, and completely covering the trenches at said face of the substrate, an opening formed through one of the first portions of getter material or through the substrate and making the interior volumes of the trenches communicate with an interior volume of the cavity.
Public/Granted literature
- US20150151959A1 ENCAPSULATION STRUCTURE COMPRISING TRENCHES PARTIALLY FILLED WITH GETTER MATERIAL Public/Granted day:2015-06-04
Information query
IPC分类: