Invention Grant
- Patent Title: Method of manufacturing thin film semiconductor device
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Application No.: US12216081Application Date: 2008-06-30
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Publication No.: US09328414B2Publication Date: 2016-05-03
- Inventor: Masafumi Kunii
- Applicant: Masafumi Kunii
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2007-192740 20070725
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/02 ; C23C16/24 ; C23C16/455 ; C23C16/509 ; H01L21/02 ; H01L27/12 ; H01L29/66
Abstract:
Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SinH2n+2 (n=2, 3, . . . ) and a hydrogen gas are used as film forming gases.
Public/Granted literature
- US20090029530A1 Method of manufacturing thin film semiconductor device Public/Granted day:2009-01-29
Information query
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