Invention Grant
- Patent Title: Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single crystal silicon
- Patent Title (中): 评价多晶硅晶体取向度的方法,多晶硅棒的选择方法以及单晶硅的制造方法
-
Application No.: US14389912Application Date: 2013-03-29
-
Publication No.: US09328429B2Publication Date: 2016-05-03
- Inventor: Shuichi Miyao , Junichi Okada , Shigeyoshi Netsu
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-085528 20120404
- International Application: PCT/JP2013/002178 WO 20130329
- International Announcement: WO2013/150758 WO 20131010
- Main IPC: C30B33/00
- IPC: C30B33/00 ; C30B13/34 ; C30B29/06 ; G01N23/207 ; C30B35/00 ; C01B33/02 ; C23C16/24 ; C30B25/02 ; C30B13/00 ; C30B15/00

Abstract:
When a plate-like sample 20 extracted from a polycrystalline rod is evaluated, peaks can appear in a φ-scanning chart. The smaller the number of such peaks, and the narrower the half-value width of the peak, the more suitable the polycrystalline silicon rod is as a raw material for producing single-crystal silicon. It is preferable that the number of peaks in the φ-scanning chart is, for both the Miller index planes and , equal to or smaller than 24/cm2 when converted into unit per area of the plate-like sample. It is also preferable that the value obtained by multiplying the peak half-value width by δL=21/2πR0/360, where R0 is the radius of the sample, is defined as an inhomogeneous crystal grain size, and that a polycrystalline silicon rod of which all the inhomogeneous crystal grain sizes are smaller than 0.5 mm is selected as a raw material for producing single-crystal silicon.
Public/Granted literature
Information query