Invention Grant
- Patent Title: Semiconductor photodetector device
- Patent Title (中): 半导体光电探测器
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Application No.: US14065477Application Date: 2013-10-29
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Publication No.: US09329077B2Publication Date: 2016-05-03
- Inventor: Yuji Masuyama , Masaharu Nakaji , Yoshihiro Hisa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2013-025660 20130213
- Main IPC: H03F3/08
- IPC: H03F3/08 ; G01J1/02 ; H01L31/0203

Abstract:
A semiconductor photodetector device includes a header, a high frequency amplifier, and a submount having a top surface. The high frequency amplifier is located on the header and has a top surface with a high frequency grounding pad disposed on the top surface of the amplifier. First and second electrode pads are located on the top surface of the submount. A semiconductor photodetector having a footprint smaller than the first electrode pad is bonded to the first electrode pad. The high frequency grounding pad is connected to the second electrode pad by a wire.
Public/Granted literature
- US20140224967A1 SEMICONDUCTOR PHOTODETECTOR DEVICE Public/Granted day:2014-08-14
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