Invention Grant
US09329077B2 Semiconductor photodetector device 有权
半导体光电探测器

Semiconductor photodetector device
Abstract:
A semiconductor photodetector device includes a header, a high frequency amplifier, and a submount having a top surface. The high frequency amplifier is located on the header and has a top surface with a high frequency grounding pad disposed on the top surface of the amplifier. First and second electrode pads are located on the top surface of the submount. A semiconductor photodetector having a footprint smaller than the first electrode pad is bonded to the first electrode pad. The high frequency grounding pad is connected to the second electrode pad by a wire.
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