Invention Grant
US09329201B2 Methods, devices, and systems for forming atomically precise structures
有权
用于形成原子精确结构的方法,装置和系统
- Patent Title: Methods, devices, and systems for forming atomically precise structures
- Patent Title (中): 用于形成原子精确结构的方法,装置和系统
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Application No.: US14209659Application Date: 2014-03-13
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Publication No.: US09329201B2Publication Date: 2016-05-03
- Inventor: John Neal Randall , James R. Von Ehr , James H. G. Owen , Joshua B. Ballard , Ehud Fuchs
- Applicant: Zyvex Labs, LLC
- Applicant Address: US TX Richardson
- Assignee: Zyvex Labs LLC
- Current Assignee: Zyvex Labs LLC
- Current Assignee Address: US TX Richardson
- Agency: Haynes and Boone, LLP
- Main IPC: B82B3/00
- IPC: B82B3/00 ; G01Q60/10 ; G01Q90/00 ; G01Q20/00 ; G01Q10/00 ; G01Q80/00

Abstract:
Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) to remove portions of a monolayer of atoms or molecules from a crystalline surface to form atomically precise structures. The STM is utilized to both image the sample and remove the desired portions of the monolayer of atoms or molecules. In some instances, the lattice structure of the crystalline surface is utilized as a coordinate system by a control system of the STM to facilitate the automated removal of specific atoms or molecules from the crystalline surface.
Public/Granted literature
- US20150355226A1 Methods, Devices, and Systems for Forming Atomically Precise Structures Public/Granted day:2015-12-10
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