Invention Grant
US09329283B2 Semiconductor-detector-based method and device for detecting ionising radiation
有权
用于检测电离辐射的基于半导体检测器的方法和装置
- Patent Title: Semiconductor-detector-based method and device for detecting ionising radiation
- Patent Title (中): 用于检测电离辐射的基于半导体检测器的方法和装置
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Application No.: US14653355Application Date: 2013-12-23
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Publication No.: US09329283B2Publication Date: 2016-05-03
- Inventor: Jean-Pierre Rostaing
- Applicant: Commissariat A L'Energie Atomique Et Aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Vedder Price, P.C.
- Priority: FR1262576 20121221
- International Application: PCT/FR2013/053252 WO 20131223
- International Announcement: WO2014/096746 WO 20140626
- Main IPC: G01T1/29
- IPC: G01T1/29 ; G01T1/24

Abstract:
A device for detecting ionizing radiation results in charges forming in a sensor covered with a plurality of electrodes that are each connected to an electronic circuit adapted to deliver, to a processing module, a first signal indicating when charge has been collected by the electrode connected to said circuit. Each central circuit is adapted, when a central electrode has collected charge, to determine a possible detection overlap with one of the adjacent electrodes; to determine a priority detection overlap with an adjacent priority circuit; to transmit or receive to/from the adjacent priority circuit a request to participate in a detection overlap and to receive or transmit from/to the adjacent priority circuit an indication of availability; and to transmit said first signal except in the case where an availability indication has been transmitted to the adjacent priority circuit.
Public/Granted literature
- US20150323686A1 SEMICONDUCTOR-DETECTOR-BASED METHOD ADN DEVICE FOR DETECTING IONISING RADIATION Public/Granted day:2015-11-12
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