A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.