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US09329474B2 Photoresist composition and resist pattern-forming method 有权
光刻胶组合物和抗蚀剂图案形成方法

Photoresist composition and resist pattern-forming method
Abstract:
A photoresist composition includes a polymer component that includes a first structural unit represented by the formula (1) and a second structural unit represented by the formula (2), an acid generator, and a compound represented by the formula (3). The first structural unit and the second structural unit are included in an identical polymer, or different polymers. R1 is hydrogen atom, fluorine atom, etc., R2 and R3 are independently hydrogen atom, fluorine atom, etc., a is an integer from 1 to 6, R4 and R5 independently hydrogen atom, fluorine atom, etc., R6 is hydrogen atom, fluorine atom, etc., R7 and R8 are each independently alkyl group having 1 to 4 carbon atoms, etc., R9 is alkyl group having 1 to 4 carbon atoms, etc., R10 is hydrogen atom, etc., A− is —N−—SO2—Ra, etc., and X+ is onium cation.
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