Invention Grant
- Patent Title: Photoresist composition and resist pattern-forming method
- Patent Title (中): 光刻胶组合物和抗蚀剂图案形成方法
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Application No.: US13852147Application Date: 2013-03-28
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Publication No.: US09329474B2Publication Date: 2016-05-03
- Inventor: Kazuki Kasahara , Norihiko Ikeda
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-084391 20120402
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/027 ; G03F7/20 ; G03F7/039

Abstract:
A photoresist composition includes a polymer component that includes a first structural unit represented by the formula (1) and a second structural unit represented by the formula (2), an acid generator, and a compound represented by the formula (3). The first structural unit and the second structural unit are included in an identical polymer, or different polymers. R1 is hydrogen atom, fluorine atom, etc., R2 and R3 are independently hydrogen atom, fluorine atom, etc., a is an integer from 1 to 6, R4 and R5 independently hydrogen atom, fluorine atom, etc., R6 is hydrogen atom, fluorine atom, etc., R7 and R8 are each independently alkyl group having 1 to 4 carbon atoms, etc., R9 is alkyl group having 1 to 4 carbon atoms, etc., R10 is hydrogen atom, etc., A− is —N−—SO2—Ra, etc., and X+ is onium cation.
Public/Granted literature
- US20130280657A1 PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD Public/Granted day:2013-10-24
Information query
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