Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14054168Application Date: 2013-10-15
-
Publication No.: US09329927B2Publication Date: 2016-05-03
- Inventor: Masayuki Ito
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2012-230383 20121018
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F11/16
Abstract:
A semiconductor device comprising: a first processor; a second processor; a first delay circuit delaying a signal input into the first processor by a predefined number of cycles and inputting the signal into the second processor; a first compression circuit compressing a signal of n-bit width from the first processor into a signal of m-bit width (m
Public/Granted literature
- US20140115401A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-04-24
Information query
