Invention Grant
- Patent Title: Measuring cell damage for wear leveling in a non-volatile memory
- Patent Title (中): 在非易失性存储器中测量电容器损坏
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Application No.: US13620982Application Date: 2012-09-15
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Publication No.: US09329948B2Publication Date: 2016-05-03
- Inventor: Yan Li , Alexander Hubris , Hao Zhong
- Applicant: Yan Li , Alexander Hubris , Hao Zhong
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Taylor English Duma LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/16 ; G06F12/02 ; G11C16/34 ; G11C29/42 ; G11C29/50 ; G11C29/52

Abstract:
An NVM controller measures cell damage for wear leveling in an NVM, thus improving performance, reliability, lifetime, and/or cost of a storage sub-system, such as an SSD. In a first aspect, the controller determines that an error reading a page of NVM was caused by cell damage and/or cell leakage. The controller reprograms and immediately reads back the page, detecting that the error was caused by cell damage if an error is detected during the immediate read. In a second aspect, the cell damage is tracked by updating cell damage counters for pages and/or blocks of NVM. In a third aspect, wear leveling is performed based at least in part upon measured cell damage for pages and/or blocks of NVM.
Public/Granted literature
- US20140082459A1 MEASURING CELL DAMAGE FOR WEAR LEVELING IN A NON-VOLATILE MEMORY Public/Granted day:2014-03-20
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