A method and system for operating a memory device in programming mode is disclosed. The memory device includes a programming mode and a normal mode. The memory device in programming mode increases the number of physical planes that can be programmed in parallel than can be programmed in normal mode. In this way, the memory device may be programmed more quickly at various times of operation of the memory device (such as during manufacturing). The host system may send rearranged data to the memory device in programming mode with the rearranged data accounting for the increased number of physical planes programmed in parallel.