According to one embodiment, a semiconductor memory device includes a first bit line extending in a first direction, a first source line including a first portion that extends in the first direction, a second portion that extends in the first direction, and a third portion that connects one end of the first portion and one end of the second portion, a first memory cell having one terminal electrically connected to the first bit line and the other terminal electrically connected to the first portion of the first source line, a first sense amplifier arranged on the other end side of the first portion and the second portion of the first source line, and a first current sink arranged on a side of the first sense amplifier with respect to the first bit line and the first source line.